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| 1n4531 / 1n4148 / 1n4150 / 1n4448 diodes switching diode 1n4531 / 1n4148 / 1n4150 / 1n4448 ? this product is available only outside of japan. z z z z application high-speed switching z z z z features 1) glass sealed envelope. (msd, gsd) 2) high speed. 3) high reliability. z z z z construction silicon epitaxial planar z z z z external dimensions (units : mm) 0.5 0.1 c 29 1 29 1 cathode band (black) 3.8 0.2 a 1.8 0.2 type no. rohm : gsd eiaj : ? jedec : do-35 0.5 0.1 c 29 1 29 1 cathode band (black) 2.7 0.3 a 1.8 0.2 type no. rohm : msd eiaj : ? jedec : do-34 1n4531 1n4148 / 1n4150 / 1n4448 z z z z absolute maximum ratings (ta = 25 c) type 1n4148 100 ? 65 ~ + 200 ? 65 ~ + 200 (v) v rm 75 (v) v r 450 (ma) i fm 150 (ma) i o 200 (ma) i f 2 (a) 1 s i fsm 500 (mw) p 200 1n4531 100 ? 65 ~ + 200 ? 65 ~ + 200 75 450 150 200 2 500 200 1n4150 50 ? 65 ~ + 200 ? 65 ~ + 200 50 600 200 250 4 500 200 1n4448 100 ? 65 ~ + 200 ? 65 ~ + 200 75 450 150 200 2 500 200 ( c ) tj ( c ) topr ( c ) tstg z z z z electrical characteristics (ta = 25 c) type 0.1ma 1.0 0.66 0.62 0.74 0.76 0.86 0.82 0.92 1.0 0.87 1.0 0.54 0.62 0.72 @ 0.25ma @ 1ma @ 2ma @ 5ma @ 10ma @ 20ma @ 30ma @ 50ma @ 100ma @ 200ma @ 250ma @ 5 a 75 100 50.0 20 4 4 0.025 5.0 20 75 ? 50 0.1 50 100.0 50 2.5 4 ? 100 50.0 20 4 4 @ 100 a @ @ 150 c v r (v) @ 25 c v r (v) t rr (ns) c r (pf) i r ( a) max. bv (v) min. v f (v) i f = 10ma f = 1mhz v r = 0 r l = 100 ? v r = 6v 1n4148 1.0 75 100 50.0 20 4 4 0.025 5.0 20 75 1n4531 1n4150 1n4448 0.025 5.0 20 75 the upper figure is the minimum v f and the lower figure is the maximum v f value.
1n4531 / 1n4148 / 1n4150 / 1n4448 diodes z z z z electrical characteristic curves (ta = 25 c) 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.2 0.5 1 2 5 10 20 50 100 forward current : i f ( ma) forward voltage : v f ( v) fig. 1 forward characteristics ta = 125 c ta = 75 c ta = 25 c ta =? 25 c 0 20 40 60 80 100 120 3 10 30 100 300 1000 3000 reverse voltage : v r ( v) reverse current : i r ( na) fig. 2 reverse characteristics 70 c 50 c 100 c ta = 25 c 0 0 10 20 30 0.5 1.0 1.5 2.0 2.5 3.0 51525 f = 1mhz reverse voltage : v r ( v) capacitance between terminals : c t ( pf) fig. 3 capacitance between terminals characteristics fig. 4 reverse recovery time characteristics 0 0 10 20 30 1 2 3 v r = 6v i rr = 1/10i r reverse recovery time : t rr ( ns) forward current : i f ( ma) 0.1 1 10 100 1000 10000 1 2 5 10 20 50 100 pulse single pulse pulse width : tw (ms) surge current : i surge ( a) fig. 5 surge current characteristics pulse generator output 50 ? sampling oscilloscope 50 ? 0.01 f 100ns input d.u.t. i r 0.1i r t rr output 0 5 ? fig. 6 reverse recovery time (t rr ) measurement circuit |
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